Dec 19, 2023
Two types of IGBT is their. PT-IGBT, NPT-IGBT
Editorial Team - everything PE
Jan 10, 2023
There are two types of IGBTs - Punch Through IGBT or PT-IGBT also known as asymmetrical IGBT and Non-Punch Through IGBT or NPT-IGBT also known as asymmetrical IGBT.
PT-IGBT comprises n- (drift), n+ (buffer), and p+ (anode) regions. The n- the region is optimized to meet the withstand voltage requirement. PT IGBTs, which are fabricated using epitaxial wafers, have a thick p+ collector region with high dopant concentration. In the conducting state, large amounts of carriers are injected from the collector to achieve conductivity modulation and thereby reduce the on-state voltage.
NPT-IGBT is designed with a thick n- drift region so that the depletion layer remains within the n- drift region even in the maximum electric field. Therefore, NPT IGBTs do not have an n+ buffer region that is required in PT IGBTs to reduce the expansion of the depletion layer. In addition, the NPT IGBT has a thin p+ region. And by varying the dopant concentration of this p+ region, the amount of carrier injection is controlled.
The difference between the two types of IGBTs are summarised in the table below:
PT-IGBT
NPT-IGBT
Has asymmetrical configuration
Has symmetrical configuration
Has low conduction loss which increases with temperature
Has higher conduction loss which is independent of temperature
Not preferred for parallel configuration application circuits
Better parallel operation due to better temperature coefficient and shared heating dissipation
Offers less thermal stability
More Thermal stability
Low switching losses
Higher switching losses
Less rugged in short circuit failure mode
More rugged in short circuit failure mode
Lower lifetime
Relatively higher lifetime
Mostly used in DC circuits
Mostly used in AC circuits
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