Silicon Carbide (SiC) Power Transistors offer low on-resistance at high blocking voltages, high switching speed and thermal performance that allows system engineers to achieve significant gains in size, weight and efficiency for motor drives and battery chargers, in electric vehicles (EV) for example. The continuous drop in pricing is making SiC a mainstream technology now. However, an important challenge for the adoption of SiC and other wide bandgap transistors in high power applications is the availability of well-optimized power modules as well as the learning curve in reliably driving them.

Intelligent Power Modules answer both challenges by offering highly integrated plug-in-play solutions accelerating time-to-market and saving engineering resources. CISSOID's SiC Intelligent Power Module platform is a result of more than 10 years of expertise in the development of SiC power modules and gate drivers.

The 3-phase 1200 V SiC MOSFET Intelligent Power Module platform integrates the power switches and gate driver based on the CISSOID HADES2 chipset. These modules can operate at a high junction temperature of up to 175°C. The integration of the gate driver together with the power module provides a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt and protection of the power stages (Desat, UVLO, AMC, SSD, Anti-overlapping).

This 3-phase 1200 V SiC MOSFET Intelligent Power Module platform includes 3 modules with pin-fin AlSiC baseplate for liquid cooling with different current rating allowing to find the best trade-off between cost, conductive and switching losses. It also includes a flat AlSiC baseplate module for applications where liquid-cooling is not an option.

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