Toshiba Introduces 650 V Power MOSFETs for Industrial and Power Supply Applications

Toshiba has added four products—TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z—to its DTMOSVI series of 650 V new generation super junction structure N-channel power MOSFETs that are for switching power supplies of industrial equipment used for data centers, power conditioners for photovoltaic generators, etc.

The lineup has been expanded concerning package, drain-source on-resistance, and gate-drain charge. The new generation DTMOSVI series has reduced the figure of merit "drain-source on-resistance X gate-drain charge” by about 40 % compared to the current generation DTMOSIV-H series. This can improve the efficiency of switching power supplies by about 0.36 %. Toshiba will continue to expand its product lineup to meet market trends and help improve the efficiency of power supplies.

Key features of these MOSFETs:

The values of “drain-source on-resistance X gate-drain charge” have been reduced by about 40% to improve the efficiency of switching power supplies
It employs the through-hole type of TO-220 package

Main specifications: