Efficient Power Conversion announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 milliohms, 530 A pulsed, rad-hard eGaN FET will be available in a small 13.9 square mm footprint. These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.
The device has a figure of merit 20 times superior to alternative rad-hard silicon solutions and the size is 20 times smaller. With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Finally, GaN devices support higher total radiation levels and SEE LET levels than silicon solutions.
Applications benefiting from the performance and fast deployment of the EPC7019 include power supplies for satellites and mission equipment and motor drives for robotics and instrumentation.
“EPC’s GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before,” said Alex Lidow, CEO, and co-founder of EPC. “The EPC7019 offers designers a solution with a figure of merit that is 20 times better than best-in-class silicon rad-hard devices. This is the lowest on-resistance for a rad-hard transistor on the market today. And, the EPC7019 has a significantly smaller and lower cost”.
Availability
The EPC7019 is available for engineering sampling and will be fully qualified for volume shipments.
Click here to learn more about EPC7019
