Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, low-cost gallium nitride on silicon (GaN-on-Si) power solutions has announced a new ultra-high-density 140 W power supply demo that uses the company's high- and low-voltage GaN HEMT devices to achieve efficiencies of over 95% (230 VAC; 5 V/28 A). Measuring just 60 x 60 x 22 mm (2.4 x 2.4 x 0.9 in) the PSU has a class-leading power density of 1.76 W/cm3 (29 W/in3).
Dr. Denis Marcon, General Manager of Innoscience Europe and Marketing Manager for the USA and Europe, explained: "By using GaN switches for both the high- and low-voltage functions on this design, we are maximizing efficiency rather than compromising it with lossy silicon devices. This is possible thanks to Innoscience's cost-effective and high-volume manufacturing processes and capabilities."
The 140 W 300 kHz AC/DC adapter uses a CRM Totem Pole PFC + AHB topology. It features Innoscience's INN650DA140A, a 650 V/140 mΩ GaN HEMT in the 5 x 6 mm DFN package, for switches S1 and S2, the 650 V/240 mΩ, 8 x 8 mm DFN-packaged INN650D240A for S3, and the INN650DA240A, a 5 x 6 mm DFN 650 V/240 mΩ device for S4. S5 and S6 are delivered by the INN150LA070A, a 150 V/7 mΩ, 2.2 x 3.2 mm LGA part within Innoscience's low-voltage GaN HEMT range.
Yi Sun, General Manager of Innoscience America and Sr VP of Product and Engineering adds: "This design, which targets USB PD3.1 notebooks and power tools, is a full 2% more efficient than silicon designs; this proves what can be achieved if GaN FETs are used everywhere, even in a relatively simple design."
Founded in December 2015, Innoscience is the only IDM company in the world that can mass-produce both high- and low-voltage GaN devices. Innoscience has its own normally-off, single-die technology and has the industry's largest 8 in. wafer GaN-on-Si production capacity. In the consumer market, fast charging products have led to the adoption of GaN technology. Today, many other markets are also starting to use GaN, accelerating Innoscience's growth.
Click here to learn more about GaN HEMTs from Innoscience.
