EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 milliohm, 80 A Pulsed, rad-hard GaN FET in a small 5.76 square millimeter footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/square centimeter). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.

Compared to rad-hard silicon devices with similar Rds(on), the EPC7007 offers 40 times smaller Qg and Qgd, zero reverse recovery (Qrr). and the size is 40 times smaller. With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and very low on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions.

Applications benefiting from the performance and fast deployment of the EPC7007 include DC-DC power, motor drives, lidar, deep probes, and ion thrusters for space applications, satellites, and avionics.

“EPC’s GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. The EPC7007 offers designers a solution with a figure of merit that is 50 times better than best-in-class silicon rad-hard devices,” said Alex Lidow, CEO, and co-founder of EPC. “The EPC7007 extends the voltage range of our rad-hard family to 200 V and provides designers with a solution that is significantly smaller and lower cost than silicon."

Availability

The EPC7007 is available for engineering sampling and will be fully qualified for volume shipments.

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