Tower Semiconductor, a leading foundry of high-value analog semiconductor solutions, announced the expansion of its power management platforms with the release of the second generation of its state of the art 65 nm BCD expanding operation to 24 V and reducing Rds(on) by 20%. The company is also adding deep trench isolations to its 180 nm BCD platform enabling up to 40% die size reduction for voltages up to 125 V. The new releases address the increasing demand for higher power ICs at higher voltages and power efficiency, further enhancing Tower’s leading market position in support of the power IC market that according to Yole Développement (Yole) will reach over $25.5B by 2026.
Tower’s 65 nm BCD platform is known as the best-in-class sub-90 nm BCD technology with its leading figure of merit in power performance, cost, and integration competitiveness. The second-generation 65 nm BCD benefits from power performance and/or die size reduction by up to 20% due to the decrease in LDMOS Rds(on) for devices up to 16 V together with voltage extension to 24 V operation. These advancements firmly address the needs of the computing and consumer markets for monolithic high-power converters, including, high-power voltage regulators for CPUs and GPUs in addition to applications such as chargers high-power motor drivers, and power converters.
The Company’s 180 nm BCD is the industry’s widest, best-in-class platform concerning voltage coverage, isolation schemes, power performance, die size, and mask count. The 180 nm BCD deep trench isolation scheme (DTI) offers improved noise immunity within a single IC, flexibility at the elevated voltages enabling to select between multiple isolation schemes, and reduced die size by up to 40%. All these strategic features support the market’s increasing deployment of 48 V systems that require ICs to hold voltages up to 120 V and more; and specifically address the advancing requirements of the industrial and automotive applications including gate drivers, power converters, motor drivers, and automotive 48 V systems with their demand for advanced isolations in ICs with multiple voltage domains at a smaller die size.
The Company will participate in the upcoming PCIM 2022 in Nürnberg, Germany, May 10 - 12, 2022 at booth No: 6-431.
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