Efficient Power Conversion, a world leader in enhancement-mode gallium nitride power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. 

The low losses and small size of the EPC2066 make it the ideal switch for the secondary side of high power density 40 V – 60 V to 12 V DC-DC converters for the latest servers and artificial intelligence. It is also ideal for the secondary side synchronous rectification to 12 V in power supply and silver box data center servers, and high-density motor drive applications from 24 V to 32 V. The high-frequency operation, high efficiency, and an ultra-small 13.9 square millimeter footprint of the GaN FET combine for state-of-the-art power density.

The EPC2066 is footprint compatible with EPC’s prior Generation 4 product, the EPC2024. The Generation 5 improvement in Area x RDS(on) gives the EPC2066 a 27% reduction in on-resistance in the same area.

“The EPC2066 is significantly smaller than any other FET in the market at this on resistance”, commented Alex Lidow, EPC’s co-founder and CEO. “This part is the perfect complement to the recently released EPC2071 for LLC DC-DC for high power density computing applications.”

Reference Design

The EPC9174 reference design board is a 1.2 kW, 48 V input to 12 V output LLC converter. It features the EPC2071 on the primary side full bridge and the EPC2066 on the secondary side. The GaN FETs enable a 1 MHz switching frequency and 1.2 kW of power in a small 22.9 mm x 58.4 mm x 10 mm size (power density 1472 W/cubic inch). The peak efficiency is 97.3% at 550 W and the full load efficiency of 96.3% at 12 V, delivering 100 A output.

Price and Availability

The EPC2066 eGaN FET is priced at 1K u/reel at $3.75 each

The EPC9174 development board is priced at $780.00/each

Click here to learn more about EPC2066

Click here to learn more about EPC2071