Transphorm Introduces Reference Designs for USB-C PD GaN Power Adapter Development

Transphorm Introduces Reference Designs for USB-C PD GaN Power Adapter Development

Transphorm, a pioneer in and global supplier of high reliability, high-performance gallium nitride (GaN) power conversion products announced the availability of seven reference designs intended to speed the development of GaN-based USB-C PD power adapters. The portfolio includes a wide range of open-frame design options with various topologies, outputs, and wattages (45 W to 140 W) to choose from.

SuperGaN Technology Difference

The power adapter reference designs use SuperGaN Gen IV 650 V FETs to deliver ease of design, and high reliability with high-performance advantages that have become synonymous with Transphorm GaN devices. In a recent analysis when compared to a 175 mΩ e-mode GaN device, Transphorm’s 240 mΩ SuperGaN FET showed lower on-resistance rise with temperatures above 75°C and higher performance at 50 percent and 100 percent (full) power.

Power Adapter Reference Designs

Transphorm’s portfolio includes five open frame USB-C PD reference designs ranging in frequency from 140 to 300 kHz. As an example, Transphorm partnered with Silanna Semiconductor on a 65 W active clamp flyback (ACF) RD running at 140 kHz with a peak efficiency of 94.5 percent.

  • A 45 W adapter RD offers 24 W/cubic inch power density in a quasi-resonant flyback (QRF) topology
  • 3 65 W adapter RDs offer 30 W/cubic inch power density in ACF or QRF topologies
  • A 100 W adapter RD offers 18 W/cubic inch power density in a power factor correction (PFC)+QRF topology

Transphorm’s portfolio also includes two open frame USB-C PD/PPS reference designs ranging in frequency from 110 to 140 kHz. Transphorm partnered with Diodes Inc. on both solutions, leveraging the company’s ACF controller to achieve greater than 93.5 percent peak efficiency.

  • A 65 W adapter RD offers 29 W/cubic inch power density in an ACF topology
  • A 140 W adapter RD offers 20 W/cubic inch power density in a PFC+ACF topology

Transphorm is unique in that it offers the only portfolio of GaN FETs covering the widest range of power levels for the broadest range of applications,” said Tushar Dhayagude, VP, Field Applications & Technical Sales, Transphorm. “Our power adapter reference designs spotlight our low power capabilities. We offer controller-agnostic PQFN and TO-220 devices that can dramatically simplify the design. These features along with others help our customers go to market quickly and easily with a GaN solution capable of achieving groundbreaking power efficiency levels. This is what Transphorm’s GaN is all about.”

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