Transphorm, a pioneer in and global supplier of high reliability, high-performance gallium nitride (GaN) power conversion products announced the expansion of its surface mount package offerings with the addition of the TP65H050G4BS. The new higher-power surface mount device (SMD) is a 650 V SuperGaN FET in a TO-263 (D2PAK) offering a typical on-resistance of 50 milliohms. It marks Transphorm’s seventh SMD, adding to a wide range of currently available PQFN devices for lower- to mid-power applications.

The JEDEC-qualified TP65H050G4BS offers several advantages to designers and manufacturers developing high-power systems typically used in data centers and broad industrial applications. It delivers Transphorm’s best-in-class reliability, gate robustness, and silicon noise immunity threshold along with the ease of design and drivability synonymous with its GaN technology. Engineers use the larger D2PAK where both higher power and surface mount packaging are needed, enabling better thermal performance. PQFN type packages while increasing the efficiency of PCB assembly through the use of a single manufacturing flow.

Available as a discrete device, the D2PAK is also provided on a vertical daughter card to increase the power density of Transphorm’s TDTTP2500B066B-KIT, a 2.5 kW AC-to-DC bridgeless totem-pole power factor correction (PFC) evaluation board. It can also be swapped into the 1.2 kW synchronous half-bridge TDHBG1200DC100-KIT evaluation board to drive multi-kilowatt power.

“The D2PAK is an important addition to our portfolio. It expands the usability of our SMDs to high power applications, where before we supported these with through-hole devices,” said Philip Zuk, SVP of Worldwide Marketing, Applications, and Business Development, Transphorm. “It’s another step in helping customers leverage our GaN platform’s advantages with familiar TO-XXX packages that eliminate design challenges, simplify system development, and quicken go-to-market ramps.”

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