As US auto sales are forecasted to be majority EV by 2030, Navitas Semiconductor, a pure-play, next-generation power semiconductor company, will showcase industry-leading gallium nitride (GaN) and silicon carbide (SiC) technologies at the IEEE Energy Conversion Congress & Expo (ECCE) in Detroit, Michigan (October 9th-13th).

ECCE 2022 features both industry-driven and application-oriented technical sessions, as well as industry expositions and seminars in electrical and electromechanical energy conversion. It provides engineers, researchers, and professionals a perfect blend of state-of-the-art, technical prowess and commercial opportunities.

Navitas’ 650 V-rated GaNFast power ICs with GaNSense technology are optimized for the broad range of 400 V-rated EV battery applications and AC-interfacing. New Navitas GeneSiC 1200 V FETs and diodes address 800 V-rail applications for higher-power trucks, buses, and performance passenger cars. Navitas’ unique EV System Design Center provides complete platform designs to accelerate time-to-market, including a 3-in-1 800 V-rated bi-directional charger and DC-DC converter, with up to 18% weight savings, up to 20% energy savings, and up to 65% faster charging than competing solutions.

“Upgrading from legacy silicon to GaN and SiC accelerates EV adoption by two years,” said Llew Vaughan-Edmunds, senior director of marketing at Navitas Semiconductor. “ECCE is a critical forum for professionals working to optimize power conversion across the EV landscape, and a fertile environment for detailed discussions on new technology adoption.”

ECCE 2022 is at Huntington Place, 1 Washington Blvd., Detroit, MI 48226. Navitas will feature in a focus session on SiC and GaN applications in EV from 12.30 pm to 2.10 pm (EDT) on Monday 10th October.

Click here to learn more about IEEE ECCE 2022.