Power diodes are employed in applications including DC power supplies, battery charging, AC rectifiers, and inverters because they provide uncontrolled power rectification. The market for power diodes is developing due to the rising need for power management devices. Growing urbanization and expanding infrastructure projects are fostering further market expansion. In this article, everything PE has listed some interesting Power Diodes that were trending on the website.
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650 V SiC Schottky Power Diode
The C3D16065D1 from Wolfspeed is a Silicon Carbide Schottky Power Diode. It has a repetitive peak reverse voltage of 650 V, a forward voltage of 1.5 - 2 V, and a reverse current of 18 - 38 μA. This SiC diode has a power dissipation of 173 W and a total charge of 40 nC. It provides zero reverse recovery current, and zero forward recovery voltage, and offers extremely fast switching. This power diode is available in a through-hole package and is ideal for applications such as AC-DC converters, switch-mode power supplies (SMPS), boost diodes in PFC or DC-DC stages, and freewheeling diodes in inverter stages. Read more.
Avalanche Breakdown Diode for High-Speed Data Lines
The SP33R6-04UTG from Littelfuse is a 4 Channel Avalanche Breakdown Diode. It has a breakdown voltage of 0.6-0.9 V and a reverse standoff voltage of 0.3 V. This bi-directional diode has a reverse leakage current of up to 100 nA and a dynamic resistance of 0.3 ohms. It consists of four channels with 0.2 pF low capacitance per I/O to protect ultra-high-speed interfaces. This RoHS-compliant TVS (transient voltage suppression) diode provides extremely low breakdown/turn-on voltages, making it an ideal protector of high-speed data lines with low voltage (-0.3 to +0.3 V) levels. It is available in a surface-mount package and is suitable for USB 3.2, USB 4.0, Thunderbolt 3.0, and PCIe.applications. Read more.
Glass Passivated Single-Phase Bridge Rectifier Diode
The 2W005G from Vishay is a Glass Passivated Single-Phase Bridge Rectifier Diode. It has a repetitive peak reverse voltage of 50 V, and a non-repetitive peak forward current of 60 A. The diode has a forward voltage of 1.1 V, a forward current of 2 A, and a reverse current of fewer than 5 microamperes. It has high case dielectric strength and high surge current capability. This RoHS-compliant diode is available in a through-hole package and is ideal for general-purpose use in AC/DC bridge full wave rectification for power supply, adapter, charger, lighting ballaster on consumers, and home appliance applications. Read more.
Automotive Qualified Diode for High-Speed Switching
The BAS16LS-Q from Nexperia is a General Purpose Diode that is designed for high-speed switching and general-purpose switching applications. It has a repetitive peak reverse voltage of 100 V and a non-repetitive peak forward current of 4 A. This AEC-Q101 qualified diode has a forward current of 215 mA and a forward voltage of up to 1.25 V. It has low capacitance and low leakage current. This RoHS-compliant diode is available in a surface-mount package that measures 1 x 0.6 x 0.47 mm. Read more.
Schottky Barrier Diode for Portable Applications
The SDM5U45EP3 from Diodes Incorporated is a Schottky Barrier Diode that is optimized for low forward voltage drop and low leakage current applications. It has a forward voltage of up to 580 mV and an average rectified output current of 5 A. This power diode has a peak repetitive reverse voltage of 45 V and a leakage current of up to 140 µA. It has low heat resistance, which enables design challenges with increasing efficiency while reducing board space. This RoHS-compliant diode has soft switching characteristics thus ensuring minimized EMI and EFI. It is available in a surface-mount package that measures 2 x 2 sq mm, and is suitable for portable applications such as blocking diode, boost diode, switching diode and reverse protection diode. Read more.
650 V SiC Schottky Barrier Diode for Lighting Applications
The PD002065EF from YES Power Technix is a SiC Schottky Barrier Diode. It has a forward voltage of up to 1.8 V and a continuous forward current of less than 6 A. This power diode has a reverse current of 12 µA and a peak repetitive reverse voltage of up to 650 V. It has a total power dissipation of 29 W. This diode is based on Silicon Carbide (SiC) technology that provides an extremely fast switching and temperature-independent switching behavior. It operates at high frequencies and has a shorter recovery time. This RoHS-compliant power diode is available as a through-hole package and is ideal for switch-mode power supplies, power factor correction, motor drives, and HID lighting applications. Read more.
600 V Rectifier Diode for UPS & Motor Control Applications
The D2450N02T from Infineon Technologies is a Rectifier Diode that is ideal for traction, motor control and drives, and Uninterrupted Power Supply (UPS) applications. It has a repetitive peak reverse voltage OF 400 V to 600 V and a reverse current of 50 mA. This power diode provides high DC blocking stability, high surge current capability, and full blocking capability over a wide temperature range. It is designed to minimize maintenance and reduces downtime due to high reliability. This RoHS-compliant diode integrates special designs to enable easy system power scaling for series and parallel connections. It is available in a hermetically sealed ceramic disc package that measures 58 x 14 mm. Read more.
Ultrafast Recovery Rectifier Diode for SMPS Applications
The BYR29-600 from WeEN Semiconductors is an Ultrafast Recovery Rectifier Diode that is ideal for high-frequency switched-mode power supplies (SMPS) applications. This epitaxial rectifier diode has a forward voltage of 1.07 V and an average forward current of up to 8 A. It has a reverse voltage of less than 800 V and a reverse current of 1.0 µA. This power diode has a repetitive peak reverse voltage of up to 800 V and a non-repetitive peak forward current of less than 66 A. It provides fast switching and a soft recovery characteristic that results in optimum performance. The power diode offers low thermal resistance and has a high thermal cycling performance. It is available in a through-hole package that measures 10.30 x 30.8 mm. Read more.
40 V Schottky Barrier Rectifier Diode for SMPS Applications
The BAS40M5 from Taiwan Semiconductor is a Schottky Barrier Diode that is ideal for adapters, switching power supply, low stored charge, and inverter applications. This diode has a forward voltage of up to 0.38 V and a forward current of less than 200 mA. It has a reverse voltage of over 40 V and a reverse current of less than 1 µA. This power diode has a repetitive peak reverse voltage of up to 40 V and a non-repetitive peak forward current of less than 0.5 A. It is capable of providing fast switching operation. This RoHS-compliant power diode is available in a surface-mount package that measures 1.70 x 0.90 x 0.77 mm. Read more.
1200 V AEC-Q101 Qualified SiC Schottky Barrier Diode
The SCS240KE2HR from ROHM Semiconductor is an Automotive-Qualified SiC Schottky Barrier Diode that is ideal for on-board chargers, DC/DC converters, wireless chargers, and EV charger applications. This diode has a forward voltage of 1.4 V and a forward current of less than 40 A. It has a reverse voltage of over 1200 V and a reverse current of 20 µA. This power diode has a repetitive peak reverse voltage of up to 1200 V and a non-repetitive peak forward current of less than 150 A. It has a temperature-independent switching behavior and a low forward voltage. This AEC-Q101-qualified power diode is available in a through-hole package that measures 16 x 41 x 5 mm. Read more.
