IGBTs or Insulated Gate Bipolar Transistors provide a steady electricity supply by reducing the congestion in the power supply, which leads to optimized power utilization while combining the best qualities of both Bipolar Junction Transistors and Power MOSFETs. The enormous growth in the EV market along with the development and innovation in the power devices and conversion architecture that fit automotive needs is anticipated to drive growth in the IGBT market. In this article, everything PE has listed some interesting IGBTs that were trending on the website.
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750 V Automotive Qualified IGBT
The AIKQ200N75CP2 from Infineon Technologies is an Automotive Qualified IGBT that has a collector-emitter voltage of 750 V. It has a gate-emitter voltage of ±20 V and a saturated collector-emitter voltage of up to 1.5 V. This IGBT has a DC collector current of 200 A and a gate-emitter leakage current of up to 100 nA. It consists of three fast recovery emitter-controlled diodes and offers excellent power density and current sharing during parallel operation. This AEC-Q101 qualified IGBT provides smooth switching characteristics and has a low EMI signature. It is available in a through-hole package and is ideal for xEV inverter, DC-link discharge switch, and automotive aux-drives applications. Read more.
650 V Field Stop Trench IGBT for Automotive Applications
The AFGHL50T65RQDN from onsemi is a Field Stop Trench IGBT that is designed for automotive applications. It has a collector-emitter voltage of 650 V and a gate-emitter voltage of ±20 V. This AEC Q101 qualified IGBT has a DC collector current of 78 A, a DC forward current of 54 A, and a gate-emitter leakage current of ±400 nA. It has a power dissipation of 346 W. It is based on field stop IGBT technology and offers low conduction and switching losses. This RoHS-compliant IGBT has low saturation voltage and a positive temperature coefficient for easy parallel operation. It is available in a through-hole package and is ideal for solar inverter, UPS, welder, telecom, ESS, and PFC applications. Read more.
600 V Field-Stop Trench IGBT for UPS & Motor Control Applications
The STGD5H60DF from STMicroelectronics is a Field-Stop Trench IGBT that is ideal for UPS, PFC, and motor control applications. It has a collector-emitter breakdown voltage of over 600 V, collector-emitter saturation voltage of up to 1.6 V, and gate-emitter voltage of less than 20 V. This IGBT has a collector current of up to 10 A and a gate-emitter leakage current of less than 250 nA. It has a power dissipation of up to 83 W and is built using an advanced proprietary trench gate field-stop structure that integrates an ultrafast soft recovery anti-parallel diode. The IGBT has a slightly positive temperature coefficient and very tight parameter distribution that result in a safe paralleling operation. Read more.
1250 V High-Speed Switching IGBT for UPS & Welding Applications
The RBN25H125S1FPQ-A0 from Renesas is a Trench IGBT that is ideal for welding, photovoltaic inverters, power converter systems, and UPS applications. It has a collector-emitter breakdown voltage of up to 1250 V, collector-emitter saturation voltage of 1.8 V, and gate-emitter voltage of less than 30 V. This IGBT has a collector current of up to 50 A and a gate-emitter leakage current of less than 1 µA. It has a power dissipation of up to 223 W. This IGBT is based on thin wafer technology and consists of a built-in fast recovery diode to provide a high-speed switching operation. It provides short-circuit-withstanding capabilities to prevent over-voltage of current surges in the circuit. This IGBT is available in a through-hole package that measures 15.94 x 41.32 x 5.02 mm. Read more.
2500 V Single Switch IGBT for Power Supply Applications
The IXGH25N250 from Littelfuse is a Single Switch IGBT Module that is ideal for pulse circuits, capacitor discharge circuits, high-voltage power supplies, high-voltage test equipment, laser & X-ray generators, and capacitor discharge applications. It has a collector-to-emitter voltage of up to 2500 V and a saturated collector-to-emitter voltage of 2.9 V. This IGBT has a DC collector current of up to 60 A and a gate-emitter leakage current of less than +100 nA. It can withstand short-circuit current up to 10 µs and exhibits a positive temperature coefficient at the output, making it suitable for parallel operations. This IGBT enables the use of a single device in systems whose circuits previously employed multiple, cascading, lower-voltage switches. It reduces the number of power devices while also improving cost and efficiency by eliminating complex drive and voltage-balancing components. Read more.
1200 V Field Stop Trench IGBT
The RGS30TSX2D from ROHM Semiconductor is a Field Stop Trench IGBT that is ideal for PV inverters, power conditioners, general inverters, and UPS applications. It has a collector-emitter breakdown voltage of over 1200 V, a gate-emitter voltage of 6 V, and a saturated collector-emitter voltage of 1.7 V. This IGBT has a collector current of up to 30 A and gate-emitter leakage current of less than 500 nA. It can short-circuit voltage effects of up to 10 µs and integrates a fast and soft recovery diode. This RoHS-compliant IGBT has low conduction loss that contributes to a reduction in size and an improvement in overall efficiency. It is available in a through-hole package that measures 16 x 21 x 5.2 mm. Read more.
Single Switch IGBT for AC Servo & Elevator Applications
The 6MBP100VDA060-50 from Fuji Electric is a Single Switch IGBT that is ideal for AC servo, air-conditioning, and elevator applications. It has a collector-to-emitter voltage of up to 600 V and a saturated collector-to-emitter voltage of 1.45 V. This IGBT has a DC collector current of less than 100 A. It is designed to provide low power loss and soft switching operation. The IGBT contains a reduced number of parts in the built-in control circuit, which results in higher reliability. It is equipped with built-in junction temperature protection and overheating protection functions to prevent heating of the IGBT and ensure high performance and high reliability. This single-switch IGBT is available in a through-hole package that measures 128.5 x 84 mm. Read more.
Single Switch N-Channel Enhancement Mode IGBT
The DIM1200FSM12-A000 from Dynex Semiconductor is a Single Switch N-channel Enhancement Mode IGBT module that is ideal for high-reliability inverters, motor controllers, and traction drives applications. It has a collector-to-emitter voltage of up to 1200 V and a saturated collector-to-emitter voltage of 2.2 V. This IGBT has a DC collector current of less than 1200 A. It has a large reverse bias safe operating area (RBSOA) and can withstand short-circuit current up to 10 µs, making it ideal for traction drives and other systems that demand high thermal cycling capability. This single-switch IGBT has an electrically separated base plate and a low inductance design, thereby allowing circuit designers to optimize circuit topologies. It also provides a grounded heat sink to ensure the safety of operation. This IGBT module is available in a chassis-mount package that measures 130 x 140 x 38 mm. Read more.
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Note: This list has been compiled based on user activity on everything PE. To ensure that we cover the whole range of IGBTs we limited the number of products from each category and company. The listed products are shown in random order and are grouped by category.
