Transphorm, a pioneer in and global supplier of high reliability, high-performance gallium nitride (GaN) power conversion products announced that its GaN technology was used in a Hewlett Packard USB-C PD/PPS power adapter. This design-win solidifies Transphorm’s GaN FET technology in the low and mid-power adapter space from 25 watts to 350 watts.

SuperGaN Technology Difference

The HP power adapter uses Transphorm’s SuperGaN Gen IV TP65H300G4LSG 650 V GaN FET. The technology offers the ease of designability and high reliability with high performance that have become synonymous with Transphorm GaN devices.

Further, Transphorm recently completed over 100 billion hours of field reliability data, with a failure-in-time (FIT) rate of < 0.05. These statistics encompass a broad spectrum of power levels including mission-critical applications from 25 watts through to 3.6 kilowatts.

Previously, it has been verified that when compared to a larger die (e.g., 175 mOhm) e-mode GaN device, Transphorm’s smaller die (i.e., 240 mOhm) SuperGaN FET showed a lower on resistance rise (23%) at 150°C and higher performance at 50% and 100% (full) power, owing to the inherent performance benefits of the platform.

“This is an important design-win for Transphorm as customers see the benefits of our dedication to quality and reliability with top performance, which is now being embraced by tier 1 customers like HP,” said Tushar Dhayagude, VP, Field Applications & Technical Sales, Transphorm. “Our GaN FETs are agnostic to controllers with integrated and off-the-shelf drivers resulting in the ease of design and drivability which is now becoming more and more important as we continue to gain adoption in different markets, in both low-power and high-power segments.”

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