
ROHM presents cutting-edge solutions for the key technologies of our time – revolving around energy-saving, miniaturization, functional safety, innovation, and sustainability at PCIM. Under its statement “Powering up with ROHM” the company demonstrates how it solves social and ecological challenges through its high-quality technologies.
ROHM’s product highlights at its booth 310 in hall 9 include:
- 4th Gen. SiC MOSFET: ROHM's cutting-edge SiC MOSFET technology realized industry-leading low ON resistance, minimizing switching losses and supporting 15 V and 18 V gate-source voltage. It contributes to dramatic miniaturization and low power consumption in various applications including automotive inverters and various switching power supplies.
- New molded SiC power modules: ROHM expands its package portfolio with “HSDIP20” and “DOT247”, installing the latest 4th Gen. SiC MOSFET 750 V and 1200 V devices in different RDS(on). Both achieve up to 30 kW power application depending on their conditions.
- Gate Drivers: The BM611x series is a 3,75 KV isolation, AEC-Q100 certified gate driver device specially designed for xEV traction inverter application. The product family has a new member: BM6112 is designed for high-power IGBT and SiC applications with a unique gate current of 20 A.
- Intelligent Low Side Power Devices (IPD): The BV1LExxxEFJ-C and BM2LExxxFJ-C series are a new generation of AEC-Q100 qualified 1-channel and 2-channel 40 V smart low-side switches ideally designed for automotive and industrial applications.
- 730 V Integrated Fly Back Converters: The BM2P06xMF IC series integrates a 730 V Si MOSFET and a PWM controller in one package and is ideal for industrial auxiliary power supply and SMPS applications.
- Built-in 1700 V SiC-MOSFET: BM2SC12xFP2-LBZ series is a quasi-resonant AC/DC converter that provides an optimum system for all products that have an electrical outlet.
- 150 V GaN HEMT: ROHM's 150 V GaN HEMT GNE10xxTB are optimized for power supply circuits in industrial and communication equipment for the industry's highest (8 V) gate breakdown voltage technology.
On top, ROHM will exhibit enhancements to its IGBT and GaN product portfolio at the PCIM 2023 fair.
ROHM representatives will participate in panel discussions, and conference presentations and hold presentations at the ROHM booth. Additionally, ROHM’s experts will hold poster sessions at the PCIM Europe conference.
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