Navitas to Display Next-Gen GaN and SiC Power Semiconductors at PCIM Europe 2023

Navitas to Display Next-Gen GaN and SiC Power Semiconductors at PCIM Europe 2023

Navitas Semiconductor, the only pure-play, next-generation power semiconductor company, will introduce and display an expanded portfolio of leading-edge gallium nitride (GaN) and silicon carbide (SiC) power products at Europe’s prestigious PCIM 2023 conference.

Featuring over 400 international technical papers, with a comprehensive technology and application-focused conference program, PCIM – which takes place in Nuremberg, Germany, from 9th to 11th May – is Europe’s leading event for professionals involved in the fields of “power, control, and intelligent motion”.

Visitors to the Navitas exhibition booth (Hall 9, #525) will discover how GaN and SiC deliver the advanced performance, functionality, reliability, and ease of use demanded by next-generation EVs, solar, energy storage, home appliance, and industrial drives. Highlights include GaNFast™ power ICs that integrate GaN power, sensing, and control in a single device and robust, high-voltage, high-efficiency GeneSiC™ SiC semiconductors optimized for reliable operation in harsh-environment, high-power designs.

“PCIM is a key event in the power-electronics calendar,” says, Alessandro Squeri, Navitas’ senior director for European sales. “Continuing our ‘Electrify our World™’ mission, Navitas’ demonstrations, papers, and panel discussions provide critical insight into how next-generation GaN and SiC deliver power-conversion and fast-charging solutions that could reduce global CO2 emissions by as much as six Gigatons per year by 2050.”

During this year’s conference, Navitas will participate in the following sessions:

Tuesday 9th May

  • GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor DriveApplications.”,
    • 11.40am: GaN Devices Session, Brüssel 1, Alfred Hesener, Senior Director, Industrial Applications
  • GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter.”
    • 11.40am: Power IC Session, München 2, Tom Ribarich, Senior Director Strategic Marketing
  • GaN-based High-Frequency, High-Power-Density, 2-in-1 Bi-directional OBCM Design for EV Applications.”
    • Power Electronics for Electric Cars Poster Session, Foyer, NCC Mitte, Bin Li, Senior Applications Manager, for Minli Jia, Sr. Staff Applications Engineer

Wednesday 10th May

  • “Wide Bandgap Design with GaN HEMTand Vertical GaN.” (panel)
    • 1:05pm, Hall 7, #480, Stephen Oliver, VP Corporate Marketing & Investor Relations

Thursday 11th May

  • “Reliability and Quality Requirements for SiC and GaN Power Devices.” (panel)
    • 12:10pm, Hall 7, #480, Stephen Oliver, VP Corporate Marketing & Investor Relations
  • “High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CRPS Application Using GaN Power IC.”
    • 2:20pm, DC-DC Converters Session, Brüssel 1, Bin Li, Senior Applications Manager

Click here to see everything PE's coverage of PCIM Europe, 2023.