EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, will be delivering multiple technical presentations on GaN technology and showcasing applications at PCIM Europe 2023 in Nuremberg, 09 – 11 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer-end products in Hall 9, Stand 318.
Meet with EPC’s GaN Experts During PCIM Europe
Attendees interested in meeting with EPC applications experts during the event can schedule sessions in the EPC booth for a private meeting. Meeting requests can be submitted to [email protected].
Technical Presentations Featuring GaN FETs and Integrated Circuits by EPC Experts:
Wednesday, 10 May
- The Future of GaN Devices Below 400 V, Including Key Applications and Five-Year Roadmap
Presenter: Alex Lidow, Ph.D.
Schedule: 12:25 PM (CET) - Panel: Wide Bandgap Design with GaN HEMT and Vertical GaN
Panelist: Alex Lidow, Ph.D.
Schedule: 1:05 PM (CET)
Thursday, 11 May
- Panel: Reliability and Quality Requirements for SiC and GaN Power Devices
Panelist: Alex Lidow, Ph.D.
Schedule: 12:10 PM (CET) - High Power Density, Bi-Directional, 48 V to 12 V Converter using eGaN® FETs for Next Generation BEV’s
Presenter: Michael de Rooij, Ph.D.
Schedule: 3:00 PM (CET) - Modeling and Experimental Validation of GaN-based Switching Leg in Inverter Topology for Motor Drive Applications
Presenter: Marco Palma
See the Latest GaN Technology in Hall 9, Stand 318
In exhibit hall 9, stand 318, EPC will be displaying the latest GaN technology in real-world applications including 48 V DC power for vehicle electrification, motor drives for robotics, eMobility, and drones, best-in-class 48 V DC power density for computing and telecommunications, and highly efficient and reliable solar power.
Take the ‘Change my Mind’ Challenge: Also in the exhibit booth, EPC will be running the ‘Change my Mind’ challenge. Bring your favorite MOSFET part number to enter into the interactive cross-reference tool. If the published 1,000 unit price of the MOSFET part number entered is lower than the published 1,000 unit price of the GaN cross provided, win a prize! Full contest rules are available in the booth.
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