Mitsubishi Electric announced that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module, featuring a dual-type 3.3 kV withstand voltage and 6.0 kVrms dielectric strength, on May 31. The new module is expected to support superior power, efficiency, and reliability in inverter systems for large industrial equipment such as railways and electric power systems. It will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2023 in Nuremberg, Germany from May 9 to 11.
Mitsubishi Electric has already released four full-SiC modules and two 3.3 kV high-voltage dual-type LV100 modules. To further contribute to high power output, efficiency, and reliability in inverters for large industrial equipment, the company will soon begin providing samples of its new module, which reduces switching loss as a SiC-MOSFET with a built-in SBD and an optimized package structure.
Key features
1) SBD-embedded SiC-MOSFET reduces power loss and contributes to inverter output, efficiency and reliability
- SBD-embedded SiC-MOSFET and optimized package structure reduce switching loss by 91% compared to the company's existing Si power module and by 66% compared to the existing SiC power module, thereby reducing inverter power loss and contributing to higher output and efficiency.
- SBD-embedded SiC-MOSFET and optimized current capacity improve inverter reliability.
2) Optimized terminal layout suited to various inverter configurations and capacities
- Optimized terminal layout enables parallel connection and supports various inverter configurations and capacities depending on the number of parallel connections.
- Package structure with DC and AC main terminals in opposite poles helps to simplify circuit design.
Key specifications
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