Toshiba Launches Small and Thin Common-Drain MOSFET for Quick Charging Devices

Toshiba Launches Small and Thin Common-Drain MOSFET for Quick Charging Devices

Toshiba has launched “SSM14N956L,” a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in battery protection circuits in lithium-ion (Li-ion) battery packs, such as those for mobile devices. 

Li-ion battery packs rely on highly robust protection circuits to reduce heat generation while charging and discharging and to enhance safety. These circuits must feature low power consumption and high-density packaging, requiring MOSFETs that are small and thin and that deliver low On-resistance.

SSM14N956L uses Toshiba’s micro-process, as does the already-released SSM10N954L. This ensures both low power loss, due to industry-leading low On-resistance characteristics, and low standby power, realized by industry-leading low gate-source leakage current characteristics. These qualities help to extend battery operating hours. The new product also uses a new small, thin package, TCSPED-302701 (2.74mm x 3.0mm, t = 0.085mm (typ.)).

Toshiba will continue to develop MOSFET products for protection circuits in devices powered by lithium-ion battery packs.

Features

  • Industry-leading low On-resistance: RSS(ON)=1.1mΩ (typ.) @VGS=3.8V
  • Industry-leading low gate-source leakage current: IGSS=±1μA (max) @VGS=±8V
  • Small and thin type TCSPED-302701 package: 2.74mm x 3.0mm, t=0.085mm (typ.)
  • A common-drain structure that can be easily used in battery protection circuits

Applications

  • Consumer electronics and office and personal devices with a lithium-ion battery pack, including smartphones, tablets, power banks, wearable devices, game consoles, electric toothbrushes, compact digital cameras, digital SLR cameras, etc.

Main Specifications

(Unless otherwise specified, Ta=25°C)

Part number

SSM14N956L

SSM10N954L

Configuration

N-channel common-drain

Absolute
maximum
 ratings

Source-source voltage VSSS (V)

12

Gate-source voltage VGSS (V)

±8

Source current (DC) IS (A)

20.0

13.5

Electrical
 Characteristics

Gate-source leakage current IGSS

max (μA)

@VGS= ±8V

±1

Source-source
On-resistance RSS(ON)

typ. (mΩ)

@VGS=4.5V

1.00

2.1

@VGS=3.8V

1.10

2.2

@VGS=3.1V

1.25

2.4

@VGS=2.5V

1.60

3.1

Packages

Name

TCSPED-302701

TCSPAC-153001

Size typ. (mm)

2.74 x 3,

t=0.085

1.49 x 2.98,

t=0.11

Click here to learn more about the SSM14N956L MOSFET.