Magnachip Semiconductor Announces Power MOSFET for Soft Switching Applications. The MMQ60R044RFTH from Magnachip Semiconductor is an N-Channel Power MOSFET that is ideal for server power supply, telecom, EV charging, and soft-switching applications. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 4.0 V, and a drain-source on-resistance of 38 milli-ohms. This MOSFET has a continuous drain current of up to 60 A and a power dissipation of less than 378.8 W. It utilizes Magnachip’s advanced super junction technology that offers very low drain-source on-resistance and gate charge. This MOSFET’s integrated ultra-fast body diode along with a low gate charge improves the turn-off action of the device. It has been designed to provide excellent performance, such as high efficiency and reduced EMI for soft-switching applications. This power MOSFET is available in a through-hole package that measures 15.45 x 39.61 mm.
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