Micro Commercial Components has announced the release of two cutting-edge N-channel MOSFETs featuring innovative split-gate trench (SGT) technology. These new components, the 40V MCB160N04Y and 60V MCB160406Y have been specifically designed for high current switching applications, offering low switching losses and optimal performance.
The utilization of SGT technology in these MOSFETs, combined with the reliable D2-PAK package, ensures minimal heat dissipation and enhanced overall performance and longevity. With low RDS(on), a low figure of merit (FOM), and outstanding uniformity, these state-of-the-art components deliver remarkable results.
Key features and benefits:
- Split-gate trench (SGT) technology
- N-Channel MOSFET
- High current switching capacity
- Superior power performance
- Increased efficiency
- Enhanced reliability
- D2-PAK package
- Low RDS(on)
- Extremely low switching losses
- Excellent stability and uniformity
- Reduced heat dissipation
- Long-lasting compared to traditional MOSFETs
Product Highlights:
The D2-PAK package ensures reliable and durable performance, offering improved reliability and reduced heat dissipation that contributes to a longer lifespan compared to traditional MOSFETs. The N-channel MOSFETs operate at 40V and 60V and boast low on-resistance, providing high efficiency and reducing power loss in high-power applications. With fast switching speeds, these MOSFETs are ideal for various high-frequency (HF) applications. Their low gate drive requirements allow for operation with lower voltage, simplifying the drive circuitry and reducing costs.
Key applications:
MCC's advanced N-channel MOSFETs with SGT technology provide an impressive array of benefits for engineers and end-users alike. Their extended lifespan, low on-resistance, and superb efficiency make them suitable for a wide range of markets, including:
Click here to learn more about the MCB160N04Y and MCB160406Y MOSFETs.
