OnePlus is now employing Innoscience bidirectional VGaN IC in the phone’s battery protection board, which is located within the handset. This was revealed by Innoscience Technology, which made the announcement.

Innoscience’s INN040W048A GaN-on-Silicon e-mode HEMT is distinguished by its capacity for blocking in both directions as well as its very low on resistance. This VGaN chip, which has no body diodes and a low conduction resistance, is being utilized by Oppo, RealMe, and now OnePlus to replace two silicon MOSFETs, which are traditionally needed by the safety circuitry of a mobile device because of their high resistance to conduction. This not only saves up to 64% of the available space in the OnePlus 11R phone, but it also decreases the amount of heat that is created during the charging process by 85% in peak power heating, which results in the phone being able to charge more quickly.

In addition to the blocking circuitry, Innoscience is able to provide a full GaN platform for mobile devices. This platform includes the DC/DC charge pump, battery management system, buck topology, 3D ToF, and many more features. Innoscience is now collaborating with some of the most well-known phone manufacturers in the world because these companies see the value that InnoGaN’s technology can provide to their products.

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