Toshiba Electronic Devices & Storage Corporation has launched “TPH3R10AQM,” a 100 V N-channel power MOSFET fabricated with Toshiba’s latest-generation process, U-MOS X-H. The product targets applications such as switching circuits and hot-swaps circuits on the power lines of industrial equipment used for data centers and communications base stations.
TPH3R10AQM has an industry-leading 3.1 mΩ maximum drain-source On-resistance, 16% lower than Toshiba’s 100V product, “TPH3R70APL,” which uses the earlier generation process. By the same comparison, TPH3R10AQM has expanded its safe operating area by 76% making it suitable for linear mode operation. Reducing the On-resistance and expanding the linear operating range in the safe operating area reduces the number of parallel connections. Furthermore, its gate threshold voltage range of 2.5 V to 3.5 V, makes it less likely to malfunction due to gate voltage noise.
The new product uses the highly footprint-compatible SOP Advance(N) package.
Toshiba will continue to expand its line-up of power MOSFETs that can increase the efficiency of power supplies by reducing loss, and help lower equipment power consumption.
Key features
- Featuring Industry-leading excellent low On-resistance: RDS(ON) = 3.1 mΩ (max) (VGS= 10 V)
- Wide safe operating area
- High channel temperature rating: Tch (max) =175°C
Key specifications
Key applications
Click here to learn more about TPH3R10AQM
Click here to learn more about TPH3R70APL
