
JGD Semiconductor has launched the TO-277B Package – Low VF Trench Schottky Barrier Rectifier, a groundbreaking electronic component. With a thin body measuring under 1.20 mm, it seamlessly integrates into compact electronic systems while providing a forward current range of 5.0 to 20 Amperes.
The rectifier's notable feature is its low forward voltage (VF), enabling devices to operate with enhanced efficiency and reduced power losses. It also boasts high-temperature soldering capabilities, guaranteeing reliable operation at 270 degrees celsius per 10 seconds.
Leveraging JGD Semiconductor's patented Trench Schottky technology, the rectifier delivers high surge current capability, making it suitable for applications with sudden power spikes. It's compact size and simple installation facilitate seamless integration, while its reliable molded plastic construction enables cost-effective mass production.
The TO-277B Package – Low VF Trench Schottky Barrier Rectifier finds extensive use in smartphone chargers, Solar Junction Boxes, and Power Supplies. JGD Semiconductor's latest release represents a significant milestone in the semiconductor industry, introducing advanced technology to enhance electronic device performance. By pushing boundaries with this rectifier, JGD Semiconductor continues to contribute to the evolution of the electronics landscape.
Key Specifications:
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Click here to learn more about Schottky Barrier Diodes.