Taiwan Semiconductor introduces 650 V Enhancement Mode GaN Transistors which are packaged in thermally efficient PDFN packages with small 5x6 & 8x8 mm footprints. These GaN Transistor products meet today’s high-power system requirements to achieve higher operating currents, higher efficiency, and smaller size and weight. The transistors, developed specifically for automotive, industrial, and renewable energy industries, feature the highest current GaN in production.
Key features
- True Enhancement mode
- Best FOM and performance
- No reverse recovery loss
- Easy to parallel
Common with Si MOSFET
- True enhancement mode: Normally off
- Voltage driven
- Easy slew rate control by external RG
- Compatible with Si MOSFET gate driver chip
Differences with Si MOSFET
- Lower QG: Lower drive loss / faster switching
- Higher gain and lower VGS (+5 V ~ 6 V) to turn on
- Lower VGS(th): 1.5 V (typ.)
Product Portfolio
Key applications
- SMPS, Chargers
- DC/DC converter
- Server / Telecom / Data center
- Inverters
- Renewable Energy
Click here to learn more about TSG65N068CE RVG
