
Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, will exhibit for the first time at PCIM Asia, the only exhibition in China specializing in power electronics and its applications in the fields of intelligent motion, renewable energy, and energy management. As well as debuting its easy-to-use, reliable ICeGaN GaN HEMT family in China, CGD will have a full booth presence with demos and will also present a keynote speech and two technical application presentations during the event.
The opening keynote presentation on Tuesday, August 29th, at 10 a.m. will be given by Professor Florin Udrea, CTO, Cambridge GaN Devices, entitled ‘The New Generation of Gallium Nitride Power Devices: Breaking the Limits of Ease-of-Use and Reliability’. At 11.25am on Tuesday, August 29th, CGD’s Martin Cheung, Senior Lead Application Engineer, will present a discussion on Reducing steady state losses in high performance charger topologies. The following day, at 10.55am on Wednesday, August 30th, he will present ‘Tuning GaN switching performance and operation in parallel’.
ANDREA BRICCONI Chief Commercial Officer, CGD
“China and Asia in general are vital for CGD as we look to introduce our innovative, easy-to-use, rugged, and reliable GaN solutions to the worldwide markets. PCIM Asia will see CGD debut our H2 series ICeGaN HEMT solutions in China. We are excited to be present at Asia’s leading power event for the first time and to meet existing and potential new customers and hear about their applications so we can deliver solutions that best fit their requirements.”
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