Toshiba Electronic Devices & Storage Corporation has launched “SSM10N961L,” a low-on-resistance, 30V N-channel common-drain MOSFET, suitable for devices with USB and for protecting battery packs.

Until now, Toshiba’s line-up of N-channel common-drain MOSFETs has focused on 12V products, mainly for use in protecting the lithium-ion battery packs of smartphones. The release of a 30V product realizes a wider selection of applications requiring voltages higher than 12V, such as load switching for the power lines of USB charging devices, and the protection of lithium-ion battery packs in laptop PCs and tablets. 

Realizing a bi-directional switch with a low drain-source on-resistance (R_DS(ON)) has required two MOSFETs, either 3.3 x 3.3 mm or 2 x 2 mm, with low RDS(ON). Toshiba’s new product uses a new, small, thin package TCSPAG-341501 (3.37 mm x 1.47 mm (typ.), t =0.11 mm (typ.)), and features low source-source on-resistance (R_SS(ON)) of 9.9mΩ (typ.) in a single package common-drain configuration

USB Power Delivery (USB PD) that supports a power supply ranging 15 W (5V / 3A) to a  maximum of 240 W (48V / 5A) was developed for devices requiring high power supply. USB PD specifies a role swap function for swapping the power supply and receiving side, and requires devices with USB charging to support bi-directional power supply, so that both sides can supply and receive power. The new product is an N-channel common-drain MOSFET that supports bi-directional power supply, and that has a small mounting area.

Key features

• High source-source voltage rating: V_SSS=30V
• Low on-resistance: R_SS(ON)=9.9mΩ (typ.) (V_GS=10V)
• Common-drain connection structure for bi-directional conduction
• Small and thin type TCSPAG-341501 package: 3.37 mm x 1.47 mm (typ.), t=0.11 mm (typ.)

Key specifications

Key applications

• Smartphones
• Laptop PCs
• Tablets, etc.