The demand for power MOSFET in the automotive, energy, and consumer electronics industries has increased due to the necessity for compact and sophisticated automation solutions. The adoption of the power MOSFET market as a growing application is expected to accelerate with the advent of electric vehicles. Power MOSFET has been one of the renewable energy sources that are replacing conventional energy sources globally. In this article, everything PE has listed some interesting power MOSFETs that were trending on the website.

Visit everything PE to keep up to date with new MOSFET products, news, whitepapers, webinars, and events.

AEC-Q101 Qualified N-Channel Enhancement Mode MOSFET

The MCTL300N10YHE3 from Micro Commercial Components is an Automotive Qualified N-Channel Enhancement Mode MOSFET that has been designed in an optimal package to provide excellent heat dissipation capability. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 1.55 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 300 A and a power dissipation of less than 375 W. This RoHS-compliant MOSFET is available in a surface-mount package that measures 9.70 x 11.48 x 2.20 mm. Read more.

AEC-Q100 Qualified N-Channel Enhancement Mode MOSFET

The NVMFS5C404NLWFET3G from onsemi is an Automotive Qualified N-Channel Enhancement Mode Power MOSFET that has been designed to offer a small footprint and compact design to cater to space-constrained applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 2 V, and a drain-source on-resistance of less than 0.67 milli-ohms. This MOSFET has a continuous drain current of up to 370 A and a power dissipation of less than 200 W. This AEC-Q101-qualified MOSFET provides a wettable flank option for enhanced optical inspection and is available in a surface-mount package that measures 5.7 x 4.7 x 0.9 mm. Read more.

1200 V SiC Power MOSFET

The S2M0025120K from SMC Diode Solutions is a SiC Power MOSFET that has been designed for energy-sensitive, high-frequency applications in challenging environments. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.1 V, and a drain-source on-resistance of 25 milli-ohms. This MOSFET has a continuous drain current of up to 63 A and a power dissipation of less than 446 W. It is available in a through-hole package that measures 39.71 x 15.5 x 4.8 mm and is ideal for EV fast charging modules, EV on-board chargers, solar inverters, online UPS/industrial UPS, switch mode power supplies (SMPS), DC-DC converters, and energy storage systems (ESS) applications. Read more.

800 V N-Channel Depletion Mode MOSFET

The CPC3981ZTR from Littelfuse is an N-Channel Depletion Mode Power MOSFET that is ideal for normally on switches, solid state relays, converters, telecommunications, power supplies, and current regulators applications. It has a drain-source breakdown voltage of over 800 V, a gate threshold voltage of up to -3.1 V, and a drain-source on-resistance of less than 45 ohms. This MOSFET has a continuous drain current of up to 100 mA and a power dissipation of less than 2.25 W. This MOSFET is available in a surface mount package that measures 6.7 x 6.3 x 1.8 mm. Read more.

Automotive Qualified N-Channel Enhancement Mode MOSFET

The XPJR6604PB,LXHQ from Toshiba is an Automotive Qualified N-Channel Enhancement Mode MOSFET that is ideal for switching voltage regulators, motor drivers, automotive, and DC-DC converter applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of less than 3 V, and a drain-source on-resistance of 0.75 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 200 A and a power dissipation of less than 375 W. It offers a leakage current of less than 10 µA at 40 V (drain-source voltage). This RoHS-compliant MOSFET is available in a surface-mount package that measures 7.00 x 8.44 x 2.3 mm. Read more.

30 V N-Channel Enhancement Mode Trench Power MOSFET

The AONS30300 from Alpha and Omega Semiconductor is an N-Channel Enhancement Mode Trench Power MOSFET that is ideal for high-performance OR-ing, E-Fuse, and ultra-high current battery charging/discharging applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of less than 580 milli-ohms. This MOSFET has a continuous drain current of up to 710 A and a power dissipation of less than 483 W. It exhibits a high current handling capability and offers a low drain-source on-resistance in a compact package. This RoHS 2-compliant MOSFET is available in a surface-mount package. Read more.

650 V N-Channel Enhancement Mode MOSFET

The SIHP054N65E-GE3 from Vishay is a MOSFET is an N-Channel Enhancement Mode Power MOSFET that is ideal for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), high-intensity discharge (HID), fluorescent ballast lighting, welding, induction heating, motor drives, battery chargers, and solar (PV inverters) applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 0.058 ohms. This MOSFET has a continuous drain current of up to 47 A and a power dissipation of less than 312 W. This MOSFET is available in a through-hole package that measures 10.52 x 30.25 x 4.65 mm. Read more.

1200 V N Channel Enhancement Mode SiC MOSFET

The 5SFG 0580B12000x from Hitachi is an N-Channel Enhancement Mode SiC MOSFET that is designed for e-mobility applications. This MOSFET has a gate-source voltage of 15 V and a gate threshold voltage of 2.4 V. It has a drain-source breakdown voltage of less than 1200 V and a drain-source on-state resistance of 2.9 milliohm. This SiC MOSFET has a continuous drain current of up to 580 A and a pulsed drain current of 1160 A. This SiC MOSFET is available as a molded chip that measures 110 x 69 x 17.35 mm and is ideal for the main drive drain for xEVs, e-trucks, e-buses, traction auxiliary converters, and xEV charging applications. Read more.

Automotive Qualified N-Channel SiC Power MOSFET

The DMWSH120H90SM4Q from Diodes Incorporated is an Automotive Qualified N-Channel SiC Power MOSFET that is ideal for EV charging systems, high voltage DC-DC converters, data centers/telecom power supplies, high voltage BLDC motor controls, AC-DC converters, and solar inverter applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 97.5 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 40 A and a power dissipation of less than 235 W. This RoHS-compliant MOSFET is available in a through-hole package that measures 40.61 x 15.75 mm. Read more.

600 V N-Channel Power MOSFET for Soft Switching Applications

The MMQ60R044RFTH from Magnachip Semiconductor is an N-Channel Power MOSFET that is ideal for server power supply, telecom, EV charging, and soft-switching applications. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 4.0 V, and a drain-source on-resistance of 38 milli-ohms. This MOSFET has a continuous drain current of up to 60 A and a power dissipation of less than 378.8 W. This power MOSFET is available in a through-hole package that measures 15.45 x 39.61 mm. Read more.

1200 V N-Channel SiC MOSFET for SMPS Applications

The NSF080120L3A0 from Nexperia is an N-Channel SiC MOSFET that is ideal for E-vehicle charging infrastructure, photovoltaic inverters, switch mode power supply (SMPS), uninterruptible power supply (UPS), and motor drive applications. It has a drain-source voltage of over 1200 V, a gate threshold voltage of 2.3 V, and a drain-source on-resistance of 80 milli-ohms. This MOSFET has a continuous drain current of up to 35 A and a power dissipation of less than 183 W. This MOSFET also consists of a very fast and robust intrinsic body diode. It is available in a through-hole package that measures 16.13 x 21.1 x 5.21 mm. Read more.

40 V N-Channel Logic Level MOSFET

The ISK057N04LM6 from Infineon Technologies is an N-Channel Logic Level MOSFET that has been optimized to offer high performance and power density in a compact package. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of 1.8 V, and a drain-source on-resistance of less than 5.75 milli-ohms. This MOSFET has a continuous drain current of up to 64 A and a power dissipation of less than 39.1 W. This RoHS-compliant power MOSFET is available in a surface-mount package that measures 2.10 x 2.10 mm and is ideal for industrial applications. Read more.

600 V N Channel Enhancement Mode MOSFET

The R6077VNZ4 from ROHM Semiconductors is an N-Channel Enhancement Mode Power MOSFET. This Power MOSFET has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 5.5 V, and a drain-source resistance of 42 milliohm. It has a continuous drain current of up to 77 A and a pulsed drain current of less than 231 A. This MOSFET has a power dissipation of up to 781 W. This RoHS compliant MOSFET is available as a through-hole package that measures 15.64 x 40.42 mm and is ideal for use in high-speed switching applications. Read more.

1200 V N-Channel Enhancement Mode SiC MOSFET

The GCMX080B120S1-E1 from SemiQ is an N-Channel Enhancement Mode SiC MOSFET that is designed for PFC boost converter, DC-DC converter primary switching, and synchronous rectification. It has a drain-source breakdown voltage of over 1200 V and a drain-source resistance of 77 milliohms. This MOSFET has a gate threshold voltage of 2.8 V and a power dissipation of up to 142 W. This RoHS compliant MOSFET is available in a through-hole package that measures 38 x 25.15 mm and is ideal for use in PFC boost converters, DC-to-DC converter primary switching, synchronous rectification, and server power supplies, energy storage systems, battery chargers, and photovoltaic inverter applications. Read more.

1200 V N-Channel Enhancement Mode SiC MOSFET

The CXT-PLA3SA12340A from Cissoid is an N-Channel Enhancement Mode SiC MOSFET that is ideal for electrical vehicle (EV) motor drives, heavy-duty motor drives, active rectifiers, and industrial motor drive applications. It has a drain-to-source breakdown voltage of over 1200 V and a drain-source on-resistance of 4.19 mΩ. This power MOSFET has a gate threshold voltage of 2.2 V, a continuous drain current of up to 340 A, and a pulsed drain current of less than 720 A. It is available in a surface-mount package that measures 104 x 154 x 34 mm. Read more.

Click here to learn more about MOSFETs listed on everything PE

Note: This list has been compiled based on user activity on everything PE. To ensure that we cover the whole range of MOSFETs we limited the number of products from each category and company. The listed products are shown in random order and are grouped by category.