Wolfspeed, a leading innovator in Silicon Carbide (SiC) technology, has announced the release of its third generation 650V Discrete SiC MOSFETs, exemplified by the C3M0015065D model. The advanced MOSFETs are designed to bring forth a new era of power conversion efficiency, catering to a broad spectrum of applications, including industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.
The C3M0015065D MOSFET boasts a 650V blocking voltage, 15 mΩ on-state resistances at 25°C, and a current rating of 120A. This third generation SiC technology enhances power system performance by enabling smaller, lighter, and highly efficient power conversion. The TO-247-3 package ensures robustness and versatility, making it suitable for various power applications.
Key features
- Low On-State Resistance over Temperature
- Low Parasitic Capacitances
- Fast Diode with ultra-low reverse recovery
- High-Temperature Operation (TJ = 175°C)
- Kelvin Source Pin
- Industry Standard Through-Hole & SMT Packages
- Small form factor
- Low lead inductance
- Low Thermal Impedance
Key benefits
- Improves System Efficiency with lower switching and conduction losses.
- Enables high switching frequency operation.
- Improves System Level Power Density
- Reduces System Size; Weight; and Cooling Requirements
- Enables new hard switching topologies (Totem-Pole PFC)
Key applications
- Industrial Power Supplies
- Server/Telecom
- EV-Charging Systems
- Energy Storage Systems (ESS)
- Uninterruptible Power Supplies (UPS)
- Battery Management Systems (BMS)
Engineered to deliver optimal performance, the C3M0015065D MOSFET addresses the growing demand for power solutions that enhance efficiency and reliability in modern electronic systems.
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