Bourns, a leading manufacturer of electronic components, have announced the expansion of its IGBT Discrete Model BID Series solution. The Bourns IGBT discrete Model BID Series combines technology from MOSFET gate and bipolar transistors, making it an ideal component for high voltage and high current applications. These devices utilize advanced Trench-Gate Field-Stop technology, offering greater control of dynamic characteristics and resulting in lower Collector-Emitter Saturation Voltage (VCE (sat)) and reduced switching losses.

One notable feature of these Bourns IGBT products is their positive (VCE (sat)) temperature coefficient and tight parameter distribution, which enhance safety during paralleling operations. These characteristics make them suitable for designs in Switched-Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) applications.

The expansion of the Bourns IGBT Discrete Model BID Series represents a significant advancement in power electronics technology, providing engineers with high-performance solutions for a wide range of demanding applications.

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