Innoscience has launched a 100 V bi-directional member of the company’s VGaN IC family, suitable for 48 V or 60 V battery management systems, high-side load switches in bidirectional converters, and switching circuits in power systems.

According to Innoscience, one VGaN can replace two back-to-back silicon MOSFETs, reducing battery management system size by 33 percent.

The new INV100FQ030A 100 V VGaN IC supports two-way pass-through, two-way cut-off, and no-reverse-recovery modes of operation. Devices feature a low gate charge of just 90 nC, dynamic on-resistance of 3.2 milli-ohm, and 4 x 6 mm package size.

The 100 V GaN series products are in mass production in En-FCQFN (exposed top side cooling) and FCQFN packaging.