
Cambridge GaN Devices (CGD), a fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, will be at the upcoming APEC 2024 (IEEE Applied Power Electronics Conference and Exposition). CGD will contribute to several papers including an analysis of how GaN can play a part in supporting the exponential growth in power demanded by data centers as the use of AI proliferates.
Giorgia Longobardi, CEO said: “With data centers now demanding 100kW per rack and predicting even more very shortly, power system designers are looking to employ GaN devices in new architectures. At CGD we are addressing this challenge with new devices and reference designs which we will be discussing at APEC, along with many other applications where GaN can play a huge role in enabling more efficient and sustainable electronics solutions, have high performance, and are more compact.”
Paper Presentations by CGD at APEC
Tuesday 27th February, 15.00-15.30 – ‘How ICeGaN technology can address the data center challenges that digitalization brings’, with Andrea Bricconi, CCO, CGD, and Peter Di Maso, VP of Business Development (Americas) CGD
Wednesday 28th February, 09.10-09.30 – ‘Evaluation of GaN HEMT dv/dt Immunity and dv/dt induced false turn-on energy loss’, with Nirmana Perera, application engineer, CGD
Thursday 29th February, 09:45 - 10:10: ‘Monolithic integration addresses the design challenges of GaN Power devices’, with Di Chen, director of Business
On its booth, CGD will present a range of demos designed to show its 650 V GaN HEMT family. ICeGaN H2 single-chip eMode HEMTs can be driven like a MOSFET, without special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components.
Addressing the increase in power required by the server and industrial applications, CGD will show a 350 W PFC/LLC reference design using ICeGaN (650 V, 55 mΩ, H2 series). With a board power density of 23 W/in3, the bridgeless CrM Totem Pole PFC plus half-bridge LLC design has a peak efficiency of 95%, (93% average) and a no-load power consumption of 150 mW.
Andrea Bricconi, CCO, CGD said: “GaN is now accepted as a reliable and proven technology that is able to deliver high efficiency and power density simultaneously. data centers, with their insatiable need for power, are an obvious application for GaN, but there are many other consumers, industrial and automotive applications where GaN can also demonstrate the ability to be a disruptive technology. CGD has delivered the industry’s most easy-to-use GaN technology – ICeGaN – and we are keen to share our ideas with the audience at APEC.” Development & Technical Marketing, CGD.
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