Micro Commercial Components (MCC) has recently launched the SICW028N120A4-BP, a high-performance 1200 V SiC N-channel MOSFET, that is engineered to deliver in demanding high-power applications. It has an impressively low on-resistance of just 28 milli-ohm at a gate-source voltage of 18 V.
Housed in a TO-247-4 package, this MOSFET works well with the popular D2PAK 4-pin footprint and includes a Kelvin source pin for a significant reduction in switching losses and a boost in energy efficiency.
A high operating junction temperature of up to +175°C and excellent thermal stability ensure that the new SiC MOSFET will revolutionize power management in a diverse range of industrial and commercial devices that must perform in harsh conditions.
Key features and benefits
- 1200 V blocking voltage capability
- 28 milli-ohm low on-resistance
- Kelvin source pin for enhanced switching
- Avalanche ruggedness for durability
- Excellent thermal stability
- High operating junction temperature range (+175°C)
- D2PAK-compatible 4-pin TO-247-4 package
MCC Semi’s 1200V SiC MOSFET boasts outstanding efficiency and performance, which translates to cost savings in more ways than one. Excellent thermal management eliminates the need for bulky cooling systems, further increasing reliability while reducing the space required on the footprint.
The 4-pin package ensures high-power handling in tight spaces, empowering designers to create sleeker products that don’t skimp on reliability. This advanced component is consistent when and where it matters most.
Product highlights
- Enhanced Energy Efficiency
- Improved Thermal Management
- Increased Power Density
- Reliability in Harsh Conditions
Key applications
- Motor drives
- Industrial power supplies
- Welding equipment
- High-voltage DC-DC converters
- Battery chargers
- Solar inverters
- Energy storage systems (ESS)
- High-efficiency power supplies for data center
- Uninterruptible power supply (UPS) systems
Click here to learn more about SICW028N120A4-BP
