Vishay Unveils 1200 V Silicon Carbide MOSFETs at APEC 2024

Vishay Unveils 1200 V Silicon Carbide MOSFETs at APEC 2024

At APEC 2024, Vishay will be showing its newly released 1200 V MaxSiC series SiC MOSFETs, which deliver on-resistances of 40, 80, and 250 mΩ in standard packages for industrial applications, with custom products also available.

In addition, Vishay will provide a roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 12 mΩ to 1 Ω.

Vishay’s SiC platform is based on a proprietary MOSFET technology — enabled through the company’s recent acquisition of MaxPower Semiconductor — which will address market demands in traction inverter, photovoltaic energy storage, on-board charger, and charging station applications.

Vishay’s experts will also be discussing upcoming planned releases of the MaxSiC platform, including AEC-Q101 Automotive Grade products.

Vishay

  • Country: United States
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