Qorvo, a leading global provider of connectivity and power solutions, announces four 1200 V silicon carbide (SiC) modules - two half-bridge and two full-bridge - in a compact E1B package with RDS(on) starting at 9.4 milli-ohm. These highly efficient SiC modules are excellent solutions for electric vehicle (EV) charging stations, energy storage, industrial power supplies, and solar power applications.
"The modules in this new family can replace as many as four discrete SiC FETs, thus simplifying thermomechanical design as well as assembly. Our cascode technology also allows higher switching frequency operation, further reducing solution size by using smaller external components," said Ramanan Natarajan, director of product line marketing for Qorvo's SiC Power Products business. "For our customers, the high efficiency of these modules streamlines the power supply design process, so they can focus on the design, layout, assembly, characterization, and qualification of one module as opposed to numerous discrete components."
Led by the 9.4 milli-ohm UHB100SC12E1BC3N, these four SiC modules leverage Qorvo's unique cascode configuration, which minimizes RDS(on) and switching losses to maximize efficiency, especially in soft-switching applications. Silver-sinter die attach reduces thermal resistance to as low as 0.23 °C/W; when combined with the stacked die construction found in the “SC” part numbers, power cycling performance is improved by 2X over comparable SiC power modules on the market. Together, these characteristics contribute to superior thermal performance and reliability with the ease of use and power density of a highly integrated SiC power module.
