Toshiba Electronic Devices & Storage Corporation has started mass production of a 3rd generation silicon carbide (SiC) 1700 V and drain current (DC) rating 250 A of SiC MOSFET module “MG250V2YMS3” for industrial equipment and has expanded its lineup.
The new product MG250V2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.8 V (typ.). It also offers low switching loss with low turn-on switching loss of 18 mJ (typ.) and low turn-off switching loss of 11 mJ (typ.). This helps to reduce the power loss of equipment and the size of the cooling device.
MG250V2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high-frequency isolated DC-DC converters.
Toshiba’s SiC MOSFET module of the 2-153A1A package has a lineup of four existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.
Key features
- Low drain-source on-voltage (sense):
- VDS(on)sense=0.8 V (typ.) (ID=250 A, VGS=+20 V, Tch=25 °C)
- Low turn-on switching loss: Eon=18 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
- Low turn-off switching loss: Eoff=11 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
- Low stray inductance: LsPN=12 nH (typ.)
Key specifications
Key applications
- Inverters and converters for railway vehicles
- Auxiliary power supply for railway vehicles
- Renewable energy power generation systems
- Motor control equipment for industrial equipment
- High-frequency DC-DC converters, etc.
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