The ever-changing landscape of power electronics market is increasing the need for efficient, reliable, and power-dense systems across all industries. Dynex has responded to this with the recent launch of our first Generation 7 IGBT module, further extending the portfolio of IGBT's we develop and produce. The chip size of the new 7th Generation is smaller versus previous generation IGBT modules. This allows for a higher current density.
A thorough understanding of the operating conditions of the end application is the key to developing highly targeted IGBT specifications. At Dynex, system-level optimization is central to the IGBT design process.
Dynex DIM900M1HS12-PG500 and DIM800M1HS17-PG500 can operate at higher junction temperatures. The maximum junction temperature is 175ºC with continuous operation up to T = 150ºC.
The MI trench gate IGBT is optimized for solar power inverters, motor drives, power charging equipment, and electric vehicle applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling designers to optimize circuit layouts and utilize grounded heat sinks for safety.
The Field Stop structure ensures a significant reduction in tail current that occurs during high-speed switching.
Key features
- Ultrafine 7th generation STMOS trench gate IGBT chip technology
- High thermal cycling capabiliy
- CuBase with enhanced Si3N4 substrates
- 10µs short circuit withstand
- Low EON EOFF variant
- Compact module
- Built-in NTC thermistor
- Low thermal resistance
- Excellent switching performance
Key applications
- Motor drives
- Renewable energy
- Power charging equipment
- High reliability inverters
- Auxillary power supplies
Click here to learn more about DIM900M1HS12-PG500
