Efficient Power Conversion (EPC), a world leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, publishes the Phase-16 Reliability Report adding new findings to the extensive knowledge base on GaN reliability and mission robustness. The report documents EPC’s continued work using test-to-fail methodology and adds specific guidelines for overvoltage specifications and to improve thermo-mechanical reliability.

Compared to the Phase 15 Reliability Report, this version presents expanded data and analysis. It now includes a general overview of the wear-out mechanisms of primary concerns for a given application. New to this version of the report, is a description of how to forecast the reliability of a system in a realistic mission profile that combines periods of substantial and minor stress.

Adding to the existing knowledge base, this report includes significant new material on the thermo-mechanical wear-out mechanisms and overvoltage guidelines. Thermo-mechanical wear-out mechanisms include a study of the impact of die size and bump shape on temperature cycling (TC) reliability. This report also includes a study of overvoltage robustness for both the gate and the drain of GaN transistors.

This report is divided into the following sections:

Section 1: Determining wear-out mechanisms using test-to-fail methodology.

Section 2: Using test-to-fail results to predict device lifetime in a system.

Section 3: Wear-out mechanisms

Section 4: Mission-specific reliability predictions including solar, DC-DC, and lidar applications.

Section 5: Summary and conclusions

Appendix: Solder stencil design rules for reliable assembly of PQFN packaged devices

According to Dr. Alex Lidow, CEO and co-founder of EPC, “The release of our Phase-16 report satisfies a critical need for ongoing research into GaN device reliability. This report provides valuable insights on mission robustness, ensuring devices meet the demands of diverse applications.”