Micro Commercial Components (MCC) has unveiled its latest innovation, the SI3134KU6 20V dual N-channel MOSFET, designed for optimal switching efficiency in various applications. This component comes in an ultra-compact 1 x 1 mm DFN1010 package, offering ESD protection up to 2kV and featuring a low input gate charge with a remarkable 250milli-ohm RDS (on).
The SI3134KU6 MOSFET is engineered to excel in high-speed switching scenarios, making it ideal for computing, industrial, telecom, and consumer applications. Its trench LV MOSFET technology ensures enhanced performance and reliability, catering to needs in motherboards, charging circuits, automation controls, and more.
Key features and benefits
- Trench low voltage (LV) MOSFET technology
- Dual N-channel MOSFET in a compact 1mm x 1mm size
- DFN1010 package with ESD protection up to 2kV
- Low gate charge and 250 milli-ohm RDS (on) for high-speed switching
- Ideal for applications requiring optimized energy efficiency and performance
The SI3134KU6 MOSFET's highlights include space efficiency, high-speed performance, enhanced durability with built-in ESD protection, and energy-saving design with low gate charge for minimized power consumption during switching operations.
Key applications
- Portable charger circuits
- Motherboard voltage regulation modules
- Industrial sensor interfaces
- High-speed data transmission systems
- Smartphone and tablet power management
- Automated machinery control systems
- Line drivers for high-speed data transmission
