GaN firm Innoscience has announced the INS1001DE which is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications.

Min Chen, VP of IC Design at Innoscience, comments: “The INS1001DE is perfectly matched to optimize the performance of e-mode GaN HEMTs and particularly innoscience’s e-mode InnoGaN. A strong driving capability and fast propagation delay, along with input noise deglitching and built-in UVLO, OVP, and OTP protection features, make the INS1001DE extremely suitable for high power, high frequency, and robust power GaN applications.”

The new gate driver has dual non-inverting and inverting PWM inputs, enabling flexible operation with controller, opto-coupler, and digital isolator. Independent Pull-up and Pull-down outputs facilitate the control of turn-on and turn-off speeds. Driver voltage is user-programmable to suit different gate requirements using an external resistor divider. An integrated 5 V LDO is included to supply digital isolator or other circuitry in high-side applications.

Featuring a wide 6 V to 20 V operating voltage range and with a strong 1.3 Ω Pull-up and 0.5 Ω Pull-down resistance, the INS1001DE is available in a thermally-enhanced DFN 3x3-10L package. Applications include switch-mode power supplies, AC/DC and DC/DC converters, Boost, Flyback, Forward, Half-Bridge, and Full-Bridge converters, synchronous rectification circuits, solar inverters, motor control, and UPS.