Taiwan Semiconductor, a leading provider of electronic components, has announced the launch of the 650 V SiC MPS Schottky barrier diode family. This family of 650 V silicon carbide Schottky barrier diodes is suitable for high-efficiency AC-DC, DC-DC, and DC-AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (Q_C). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.

Key features

• Max. junction temperature 175°C
• High-speed switching
• High-frequency operation
• Positive temperature coefficient on V_F
• SPICE Models available
• Thermal Models available

Key circuit functions

• PFC boost diode
• Free-wheeling diode
• Full wave bridge
• Vienna bridgeless circuit

Product lineup

Key applications

• AD-DC conversion – PFC Boost
• DC-DC, Solar inverters
• Data center and server power
• Telecom – Datacom power
• UPS systems