Innoscience will demonstrate its GaN technology at the upcoming PCIM conference and exhibition (Nuremberg, June 11-13), and focus on its price competitiveness with silicon.

On Thursday 13th June Denis Marcon, general manager of Europe, Innoscience, will give a talk, ‘GaN power HEMTs: reliable, price-competitive and ready to enhance power conversion solutions,' to show how by using economies of scale and 8-inch wafers, Innoscience is providing price-competitive GaN power devices.

Innoscience will show its portfolio covering 30 V to 700 V rated GaN power devices, including discrete (InnoGaN), integrated with driver and protection (SolidGaN), and bi-directional (V-GaN) devices as well as GaN gate drivers.

There will be also multiple demos on the stand. These include a 200 W LED GaN driver that is 50 percent smaller and thinner than its silicon counterpart; 140 W - 200 W All GaN AC-DC power converter that features InnoGaN at the primary and the secondary side; 1 kW inverter for BLDC motors; 4.2 kW PSU that is 50 percent smaller and more efficient (80+ Titanium) than the silicon counterpart; 2kW Solar PV microinverter; 300 W ultra high-density TV PSU; 2.4kW bi-directional DC-DC converter; 1 kW 48 V -12 V DC-DC converter with high power density (70 percent smaller than in silicon); and InnoGaN for e-bikes with compact 240 W charger and 3-phase motor driver.

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