Taiwan Semiconductor introduces the 4th generation 600 V NE series super junction MOSFETs designed to enhance efficiency and power density in high voltage applications. This latest NE series technology features exceptionally low on-state resistance (R_on) and low gate charge capacitance (Q_g). Achieving a 30% improvement in the figure-of-merit (FOM; R_on * Q_g), these MOSFETs offer higher value in many high-voltage applications compared to alternative options.

Key features

• 4th Generation Super Junction technology
• Low gate charge capacitance
• Excellent switching performance
• High gate noise immunity

Key applications

• Off-line switching power conversion
• Server power supplies
• HV motor drivers
• UPS systems
• Lighting controls