MCC Semi has unleashed the ultimate component for high-power switching — the 100 V N-Channel MOSFET, MCP2D6N10Y. Leveraging advanced split-gate-trench (SGT) technology and low on-resistance of 2.6 milli-ohms, this MOSFET is made to slash conduction losses while enhancing thermal efficiency.
Demanding power electronics get an extra boost of efficiency from its ultra-low junction-to-case thermal resistance of 0.6 K/W. The TO-220 package only enhances its performance thanks to its high surge capability.
An ideal combination of robust current handling, superior heat dissipation, and optimal efficiency ensures this N-channel MOSFET delivers unwavering operation in high-power applications.
Key features and benefits of MCP2D6N10Y
- High-performance 100 V N-channel MOSFET
- Utilizes SGT technology
- Low on-resistance of 2.6 milli-ohms
- Impressive junction-to-case thermal resistance of 0.6 K/W
- Maximizes thermal efficiency and minimizes power losses
- Excellent thermal capabilities
- Robust current handling capacity
- Designed for TO-220 package with high surge capability
The new robust 100 V N-Channel Power MOSFET is engineered to provide assured excellence in a range of demanding industrial devices and systems, including:
