Toshiba Unveils P-Channel Power MOSFETs for Automotive Applications

Toshiba Unveils P-Channel Power MOSFETs for Automotive Applications

Toshiba has announced the mass production of two automotive P-channel power MOSFETs using the TSON Advance (WF) package and has expanded its lineup. The products are -40V "XPN19014MC" and -60V "XPN27016MC." These newly launched power MOSFETs are qualified with the automotive reliability standard AEC-Q101.

The package is a surface mount type TSON Advance (WF) that uses a wettable flank terminal structure, facilitating automated onboard visual inspection. In addition, it has reduced package resistance by adopting the Cu connector structure.

The drain-source On-resistance is specified even under -4.5V measurement conditions, enabling stable operation even during a battery voltage drop. Furthermore, the gate-threshold voltage width is 1.1V, which reduces drain current variance and allows easy control when used in parallel.

Key Features 

  • AEC-Q101 qualified
  • Low On-resistance
  • XPN19014MC: RDS(ON)=18.7mΩ (max) (VGS=-10V)
  • XPN27016MC: RDS(ON)=27.3mΩ (max) (VGS=-10V)
  • TSON Advance (WF) package with a wettable flank terminal structure for easy automated on-board visual inspection

Main Specifications

Part Number XPN19014MC
XPN27016MC
PolarityP-Channel
Absolute Maximum Rating Drain-source voltage VDSS (V)
-40-60
Drain current (DC) ID (A)
-20-25
Drain current (pulsed) IDP (A)
-60-50
Channel temperature Tch (°C)
125

Electrical characteristics

Drain-source on-resistance RDS(ON) (mΩ)

VGS=-4.5V

Max29.2
VGS=-10V
Max18.7

Gate threshold voltage Vth (V)

VDS=-10V
-1.0 to -2.1 

Thermal characteristics


Channel-to-case thermal impedance Zth(ch-c) (°C/W)


Tc=25°C
Max2.31.5

Key Applications

Click here to learn more about XPN19014MC