Innoscience, a leader in GaN technology, has introduced the ISG3202LA, a groundbreaking 100 V, 60 A half-bridge SolidGaN device. Packaged in a compact 5 mm x 6.5 mm LGA form factor, this innovative product integrates advanced GaN FET technology with a highly efficient gate driver, making it a top choice for high-performance power electronics applications.
Key features
- High-Performance GaN FETs: The ISG3202LA features 2.4mΩ half-bridge GaN FETs with an integrated gate driver, offering an 80 V continuous and 100 V transient voltage rating for reliable operation in demanding environments.
- High-Frequency Capability: Capable of switching up to 5 MHz, the ISG3202LA is optimized for high-frequency operations, suitable for cutting-edge power conversion technologies.
- Advanced Control and Protection: With independent high-side and low-side PWM inputs, an internal strong and smart bootstrap switch, and built-in protections like UVLO, OVLO, and OTP, the ISG3202LA ensures precise control and enhanced reliability.
- Low Power Consumption: Designed for energy efficiency, the ISG3202LA features a low quiescent current of just 35μA.
- High dv/dt Immunity and Adjustable Turn-On Speeds: With high dv/dt immunity up to 50V/ns and adjustable turn-on speeds, the ISG3202LA provides robust performance and optimized EMI characteristics.
- Compact and Easy to Use: The ISG3202LA’s compact LGA package (5mm x 6.5mm) with a slim 1.12mm profile is designed for easy and low-EMI PCB layout, simplifying integration into complex designs.
Key applications
The ISG3202LA from Innoscience is ideal for:
- Half-Bridge, Full-Bridge, and Synchronous Rectifier (SR) configurations in LLC converters
- High-frequency buck and boost converters
- Power supplies for datacenters and automotive systems
- Class-D audio amplifiers and motor drive applications