Cambridge GaN Devices has unveiled a 650 V ICeGaN Power IC, an enhancement mode (e-Mode) GaN HEMT with integrated gate technology. This power transistor is suitable for Consumer electronics, such as chargers, adapters and audio systems, data center power supply and server power management, motor drives for industrial and home purposes, and industrial systems, such as renewable energy systems like solar PV inverters.

ICeGaN vs Established Technologies

Gallium Nitride (GaN) power transistors have long promised increased efficiency and power density for multiple applications. While GaN has a significant performance, efficiency and reliability advantage over conventional materials, the cost and complexity of integration are slowing industry adoption.

Until now, replacing silicon MOSFETs and IGBTs with GaN HEMTs to boost performance has remained elusive.

CGD offers real ease-of-use ICeGaN transistors. It is a single-chip solution with:

• 3 V threshold voltage
• Real 0 V turn off
• A revolutionary gate concept that can be operated up to 20 V.

As a result, you can operate ICeGaN like a MOSFET without needing special gate drivers, complex operating circuits, negative voltage supply requirements, or additional clamping components.

Key Features and Benefits of H1 & H2 Series

• Single chip e-Mode GaN HEMT – has an all-in-one design for effortless design-in
• ICeGaN gate technology – makes the product compatible with Si MOSFET, SiC and IGBT gate drivers. It also provides a wide gate drive voltage (9-20 V)
• Integrated Miller Clamp – eliminates dv/dt induced shoot-through. This also ensures true 0 V turn-off for simple gate drive
• Current Sense function – a more efficient solution to providing overcurrent protection feedback
• (H2 series) Innovative fully integrated NL³ (No Load and Light Load) Circuit – increases energy efficiency by minimizing power losses in light-load and no-load operations
• Bottom-side cooled DFN packages – help facilitate high-efficiency
• Superior gate robustness.

Key Applications

• Consumer and lower-power industrial applications, such as power supplies for laptops and tablets, motor drives, and audio equipment

Key Features and Benefits of P2 Series

• Single-chip e-Mode GaN HEMT – has an all-in-one design for effortless design-in
• ICeGaN gate technology – makes the product compatible with Si MOSFET, SiC and IGBT gate drivers. It also provides a wide gate drive voltage (9-20 V)
• Integrated Miller Clamp –eliminates dv/dt induced shoot-through. This also ensures true 0 V turn-off for simple gate drive
• Thermally-enhanced packages featuring bottom-side cooling and dual-side cooling that enhance heat dissipation and increase efficiency
• Wettable flanks for automated optical inspection
• Dual gate pinout in dual-side cooled package (DHDFN-9-1) – offers numerous gate drive connection options, simplifying the design process and allowing for easy paralleling.

Key Applications

• Datacenter and telecom SMPS
• Industrial motor drives
• PV inverters for solar systems
• Uninterruptable power supplies
• Energy storage system.