EPC Space has introduced the FBS-GAM01-P-R50 , a Radiation-Hardened Single Low Side Power Driver Module that incorporates eGaN switching power HEMTs. These devices are integrated with EPC Space's FDA10N30X output power eGaN HEMT switch, output clamp Schottky diode, and optimally driven by a high-speed Gate Drive Circuit consisting entirely of eGaN switching elements.
Additionally, the 5 Vdc gate driver V BIAS power supply of this power driver module is provided with over-voltage clamping protection along with under-voltage driver disable and reporting and contained in an innovative, space-efficient, 9 pin SMT over-molded epoxy package.
Key features of FBS-GAM01-P-R50
- Fully de-rated 50 V/10 A device (output HEMT and Schottky rectifier rated at 100 V, “C/R50” versions)
- Fully de-rated 100V/10A device (output HEMT and Schottky rectifier rated at 200 V, “C/R100” versions)
- Single low-side power drivers with integrated high speed gate driver
- Internal gate driver V BIAS power supply over-voltage clamp for added protection
- Integrated UVLO/Power Good detection and reporting circuitry
- Power Good/(low-true) Shutdown bidirectional input/output
- 3.3V compatible logic input
- 9 pin, low-profile over-molded SMT package with unique “pillar” I/O pads
- Package dimensions: 0.75″L x 0.38″W x 0.125″H (maximum)
- “Gan-Driving-GaN” technology
- High efficiency
- Radiation hardness assured (RHA) for “R” version
Key applications
- Synchronous Rectification
- Power Switches/Actuators
- Multi-Phase Motor Drivers
- Commercial Satellite EPS & Avionics
- High Speed DC-DC Conversion
