Toshiba has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, EV charging stations and switching power supplies. The company has started shipments of the ten new products in the series, five in a TO-247-2L package and five in a TO-247 package.
The new TRSxxx120Hx Series are 1200V products that use the improved junction-barrier Schottky (JBS) structure of Toshiba's third-generation 650V SiC SBD. The use of new metal in the junction barrier allows the new products to achieve an industry-leading low forward voltage of 1.27V (typ.), low total capacitive charge, and low reverse current. This significantly reduces equipment power loss in higher-power applications.
Toshiba will continue to expand its SiC power device lineup and focus on improving efficiency that reduces power loss in industrial power equipment.
Key Features
- Third-generation 1200V SiC SBD
- Industry-leading low forward voltage: V F =1.27V (typ.) (IF = IF (DC) )
- Low total capacitive charge: Q C =109nC (typ.) (V R =800V, f=1MHz) for TRS20H120H
- Low reverse current: I R =2.0μA (typ.) (V R =1200V) for TRS20H120H
Key Applications
- Photovoltaic inverters
- Electric vehicle charging stations
- Switching power supplies for industrial equipment, UPS
