Toshiba has recently launched small MOSFETs featuring low gate leakage current and low drain cut-off current for portable equipment and IoT devices such as wearable devices and tablet devices.

The new products have significantly reduced the drain cut-off current to 60 nA (max) compared with 1 μA (max) of Toshiba's existing MOSFET products and guarantee a gate leakage current of 50 nA (max) under gate-voltage conditions when the MOSFETs are in the on state (at VGS=5 V). These characteristics are suitable for applications that require minimizing total energy increased by the high-density design of semiconductor devices and for battery-powered portable devices. They significantly help energy saving and battery longevity of the equipment.

The new products are 29 types of 6 series: 4 series of 30 V and 20 V N-channel MOSFETs and 2 series of -20 V P-channel MOSFETs. A variety of small surface mount packages are available to meet the diverse needs of our customers.